PART |
Description |
Maker |
BLF4G20LS-110B |
From old datasheet system UHF power LDMOS transistor 110 W LDMOS power transistor for base station applications at frequencies
|
Philips Semiconductors NXP Semiconductors N.V.
|
BLF3G21-30 |
30 W LDMOS power transistor for base station applications at frequencies from HF to 2200 MHz. UHF power LDMOS transistor BLF3G21-30<SOT467C (SOT467C)|<<http://www.nxp.com/packages/SOT467C.html<1<Always Pb-free,;
|
NXP Semiconductors N.V.
|
BLF7G27L-90P BLF7G27LS-90P |
90 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Power LDMOS transistor
|
NXP Semiconductors N.V.
|
LB421-14 |
RF POWER LDMOS TRANSISTOR SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR
|
Polyfet RF Devices
|
BLS7G2325L-105 BLS7G2325L-105-15 |
Power LDMOS transistor BLS7G2325L-105<SOT502A (SOT502A)|<<http://www.nxp.com/packages/SOT502A.html<1<Always Pb-free,; Power LDMOS transistor
|
NXP Semiconductors N.V.
|
BLF6G20LS-140 |
Power LDMOS transistor
|
NXP Semiconductors
|
BLF6G22LS-180RN |
Power LDMOS Transistor
|
Philips Semiconductors
|
MRFE6VS25N MRFE6VS25NR1 |
RF Power LDMOS Transistor
|
Freescale Semiconductor, Inc
|
BLF7G22L-130N |
Power LDMOS transistor
|
NXP Semiconductors
|
LP702-14 |
RF POWER LDMOS TRANSISTOR
|
Polyfet RF Devices
|
BLF7G20L-160P |
Power LDMOS transistor
|
Philips Semiconductors
|
BLA6G1011-200R |
Power LDMOS transistor
|
NXP Semiconductors
|